DatasheetsPDF.com

MTB3N100E

ON Semiconductor
Part Number MTB3N100E
Manufacturer ON Semiconductor
Description High Energy Power FET
Published Sep 17, 2016
Detailed Description MTB3N100E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mod...
Datasheet PDF File MTB3N100E PDF File

MTB3N100E
MTB3N100E

Overview
MTB3N100E Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.
com TMOS POWER FET The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficie...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)