IRG4BC30W - International Rectifier
Description
PD - 91629A
IRG4BC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
C
G E
n-channel
VCES = 600V VCE(on) max.
= 2.
70V
@VGE = 15V, IC = 12A
TO-220AB
Max.
600 23 12 92 92 ± 20 180 100 42 -55 to + 150
300 (0.
063 in.
(1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units V A
V mJ W
°C
Thermal Resistance
RθJC RθCS RθJA Wt
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
––– 0.
50 ––– 1.
44
Max.
1.
2 ––– 80 –––
Units °C/W
g
www.
irf.
com
1
4/24/2000
IRG4BC30W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ
VCE(ON)
VGE(th) ∆VGE(th)/∆TJ gfe ICES
IGES
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown V...
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