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IXFH9N80Q

IXYS
Part Number IXFH9N80Q
Manufacturer IXYS
Description Power MOSFETs
Published Sep 10, 2016
Detailed Description HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q V...
Datasheet PDF File IXFH9N80Q PDF File

IXFH9N80Q
IXFH9N80Q

Overview
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9A = 1.
1 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR EAS dv/dt PD TJ TJM T stg TL Md Weight Symbol VDSS V GS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C T C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 800 V 800 V ±20 V ±30 V 9A 36 A 9A 20 mJ 700 mJ 5 V/ns 180 -55...


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