ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
● RDS(ON)≦7. 2mΩ@VGS=-10V ● RDS(ON)≦12mΩ@VGS=-4. 5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter
e Ordering Information: ME8107(Pb-free)
ME8107-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25℃ TA=70℃
TA=25℃ TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol VDS VGS
ID
IDM PD
TJ RθJA
Maximum Ratings
-35 ±20 -13 -10 -52
2 1. 3 -55 to 150 62. 5
* The device mounted on 1in2 FR4 board with 2 oz copper
1. 2
Mar, 2012-Ver1. 3
Unit V V A A W ℃
℃/W
01
ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Symbol STATIC VBR(DSS) VGS(th) IGSS IDSS
Parameter
Drain-source breakdown voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-State Resistancea
VSD Diode Forward Voltage
DYNAMIC Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd
td(on) tr td(off) tf Ciss COSS Crss
Gate-Drain ...
ME8107 PDF File
