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IRG4BC20KDPBF

Part Number	IRG4BC20KDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Aug 31, 2016
Detailed Description	PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit...
Datasheet	IRG4BC20KDPBF PDF File

Overview

PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.
0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free C G E n-channel Benefits Latest generation 4 IGBTs offer highest power density controls possible HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery ...

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IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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