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K2655-01R

Part Number	K2655-01R
Manufacturer	Fuji Electric
Description	N-channel MOS-FET
Published	Aug 31, 2016
Detailed Description	2SK2655-01R FAP-IIS Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving...
Datasheet	K2655-01R PDF File

Overview

2SK2655-01R FAP-IIS Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum RatingsT( C=25°C), unless otherwise specified Item Symbol Rating Drain-Source-Voltage V DS 900 Continous Drain Current ID 8 Pulsed Drain Current I D(puls) 32 Gate-Source-Voltage V GS ±30 Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy I AR E AS 8 141 Max.
Power Dissipation P D 100 Operating and Storage Temperature R...

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K2655-01R N-channel MOS-FET - Fuji Electric

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