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IXTR120P20T

IXYS
Part Number IXTR120P20T
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rect...
Datasheet PDF File IXTR120P20T PDF File

IXTR120P20T
IXTR120P20T

Overview
Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTR120P20T VDSS = ID25 = ≤RDS(on) trr ≤ - 200V - 90A 32mΩ 300ns ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Maximum Ratings - 200 - 200 V V ±15 ±25 - 90 - 400 -100 3 V V A A A J 10 V/ns 595 W -55 .
.
.
+150 150...


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