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IXTN170P10P

IXYS
Part Number IXTN170P10P
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G SS Symbol VDSS VDGR VGSS VGSM ID25 ID...
Datasheet PDF File IXTN170P10P PDF File

IXTN170P10P
IXTN170P10P

Overview
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN170P10P D G SS Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings -100 -100 V V ±20 ±30 -170 - 510 -170 3.
5 V V A A A J 10 V/ns 890 W -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 1.
5/13 1.
3/11.
5 30 °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Symbol Test Conditions (TJ = 25°C, Unless Ot...


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