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NTE269

Part Number	NTE269
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 18, 2016
Detailed Description	NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) a...
Datasheet	NTE269 PDF File

Overview

NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.
Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.
5V Max @ IC = 1.
5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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50V Collector–Emitter Voltage, VCES .
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50V Emitter–Base Voltage, VEBO .
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13V Colllector Current, IC Continuous .
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2A Peak (Note 2) .
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3A Continuous Base Current, IB .
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100mA Total Power Dissipation (TA = +25°C), PD .
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1.
67W Derate Above 25°C (Note 3) .
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13.
3mW/°C Total Power Dissipation (TC = +25°C), PD .
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10W Derate Above 25°C .
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80mW/°C...

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