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NTE103

Part Number	NTE103
Manufacturer	NTE
Description	Germanium Complementary Transistors
Published	Aug 18, 2016
Detailed Description	NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and ...
Datasheet	NTE103 PDF File

Overview

NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications.
Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector–Base Voltage, VCBO 25V Collector–Emitter Voltage, VCES .
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