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NTE2516

NTE
Part Number NTE2516
Manufacturer NTE
Description Silicon Complementary Transistors
Published Aug 15, 2016
Detailed Description NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter S...
Datasheet PDF File NTE2516 PDF File

NTE2516
NTE2516


Overview
NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain–Bandwidth Product D Excellent Linearity of hFE D Fast Switching Time Applications: D Display Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO .
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120V Collector Emitter Voltage, VCEO .
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100V Emitter Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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4A Peak .
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8A Collector Power Dissipation, PC TA = +25°C .
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1.
2W TC = +25°C .
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20W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain–Bandwidth Product NTE2515 NTE2516 ICBO IEBO hFE fT VCB = 100V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC ...


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