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TSF10N60C

Thinki Semiconductor
Part Number TSF10N60C
Manufacturer Thinki Semiconductor
Description 600V Insulated N-Channel Type Power MOSFET
Published Aug 12, 2016
Detailed Description TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on...
Datasheet PDF File TSF10N60C PDF File

TSF10N60C
TSF10N60C

Overview
TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.
3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.
75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1.
Gate { { 2.
Drain ● ◀▲ ● ● { 3.
Source BVDSS = 600V RDS(ON) = 0.
75 ohm ID = 10.
3A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220F pkg is well suited for adaptor power unit and small power inverter application.
TO-220F 23 1 Absolute Maximum Ratings Symbol Parameter VDSS ID Drain to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) IDM VGS EAS EAR dv/dt Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Ene...


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