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FRM240

Inchange Semiconductor
Part Number FRM240
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 12, 2016
Detailed Description isc N-Channel Mosfet Transistor INCHANGE Semiconductor FRM240 ·FEATURES ·16A, 200V, RDS(on) = 0.24Ω ·Second Generation...
Datasheet PDF File FRM240 PDF File

FRM240
FRM240


Overview
isc N-Channel Mosfet Transistor INCHANGE Semiconductor FRM240 ·FEATURES ·16A, 200V, RDS(on) = 0.
24Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures.
Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 A ID Drain Current-continuous@ TC=100℃ 10 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 VSD Diode Forward Voltage IS=16A; VGS=0 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time ID=16A; VDD=100V; RGS=25Ω INCHANGE Semiconductor FRM240 MIN TYPE MAX UNIT 200 V 2.
0 4.
0 V 0.
24 Ω ±100 nA 25 µA 1.
8 V 52 264 ns 280 148 isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor FRM240 NOTICE： ISC reserves the rights to...


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