N-Channel MOSFET Transistor - Inchange Semiconductor
Description
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
FRM140
DESCRIPTION ·23A, 100V, RDS(on) = 0.
13Ω ·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures.
Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
100 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37℃ 23 A
Total Dissipation@TC=25℃
125 W
Max.
Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient
1 ℃/W 30 ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FRM140
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 15A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0
VSD Diode Forward Voltage
IF= 23A; VGS= 0
MIN MAX UNIT
100 V
2.
0 4 0.
13
V Ω
100 nA
1 mA
1.
8 V
isc website：www.
iscsemi.
cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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fineprint.
cn
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