N-Channel MOSFET Transistor - Inchange Semiconductor
Description
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 8.
5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.
85Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
8.
5
A
IDM
Drain Current-Single Pluse
34
A
PD
Total Dissipation @TC=25℃
162
W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 0.
83 30
UNIT ℃/W ℃/W
IRFP440A
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.
25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.
25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 4.
25A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 500V; VGS= 0
VSD
Forward On-Voltage
IS= 8.
5A; VGS= 0
IRFP440A
MIN MAX UNIT
500
V
2
4
V
0.
85
Ω
±100 nA
250
μA
1.
4
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industr...
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