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IRF830PBF

Thinki Semiconductor
Part Number IRF830PBF
Manufacturer Thinki Semiconductor
Description N-Channel Type Power MOSFET
Published Aug 4, 2016
Detailed Description IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on)...
Datasheet PDF File IRF830PBF PDF File

IRF830PBF
IRF830PBF

Overview
IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.
0A,500V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 1.
5 ˟ )@VGS=10V ̰ Gate Charge (Typical 18.
5nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.
Gate { { 2.
Drain ̻ ඔ̵ ̻ ̻ { 3.
Source BVDSS = 500V RDS(ON) = 1.
5 ohm ID = 5.
0A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220C pkg is well suited for adaptor power unit and small power inverter appli...


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