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IRF740PBF

Thinki Semiconductor
Part Number IRF740PBF
Manufacturer Thinki Semiconductor
Description N-Channel Type Power MOSFET
Published Aug 4, 2016
Detailed Description IRF740PBF ® IRF740PBF Pb Free Plating Product Pb 10A,400V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (...
Datasheet PDF File IRF740PBF PDF File

IRF740PBF
IRF740PBF

Overview
IRF740PBF ® IRF740PBF Pb Free Plating Product Pb 10A,400V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.
55 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1.
Gate { { 2.
Drain ● ◀▲ ● ● { 3.
Source BVDSS = 400V RDS(ON) = 0.
55 ohm ID = 10A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min.
- (Note 1) (Note 2) (Note 1) (Note 3) Value 400 10 6.
3 40 ±30 680 12.
5 5 125 1.
0 - 55 ~ 150 300 Value Typ.
0.
5 - Max.
1 62 23 1 Units V A A A V mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W Rev.
05 © 2006 Thinki Semiconductor Co.
, Ltd.
Page 1/6 http://www.
thinkisemi.
com/ IRF740PBF ® Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage Δ BVDSS/ Breakdown Voltage Temperature Δ TJ coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Ch...


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