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IRF730PBF

Thinki Semiconductor
Part Number IRF730PBF
Manufacturer Thinki Semiconductor
Description N-Channel Type Power MOSFET
Published Aug 4, 2016
Detailed Description IRF730PBF ® Pb Free Plating Product Features ■ RDS(on) (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) ■ Improved dv/d...
Datasheet PDF File IRF730PBF PDF File

IRF730PBF
IRF730PBF

Overview
IRF730PBF ® Pb Free Plating Product Features ■ RDS(on) (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested IRF730PBF Pb 6.
5A,400V Heatsink N-Channel Type Power MOSFET 1.
Gate 2.
Drain 3.
Source BVDSS = 400V RDS(ON) = 1 ohm ID = 6.
5A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C Absolut...


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