DatasheetsPDF.com

IRF630PBF

Thinki Semiconductor
Part Number IRF630PBF
Manufacturer Thinki Semiconductor
Description N-Channel Type Power MOSFET
Published Aug 4, 2016
Detailed Description IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (M...
Datasheet PDF File IRF630PBF PDF File

IRF630PBF
IRF630PBF

Overview
IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.
4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.
Gate 2.
Drain 3.
Source BVDSS = 200V RDS(ON) = 0.
4 ohm ID = 9A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C Absolut...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)