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IRF3205

Part Number	IRF3205
Manufacturer	Thinki Semiconductor
Description	N-Channel Trench Process Power MOSFET Transistor
Published	Aug 4, 2016
Detailed Description	IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description ...
Datasheet	IRF3205 PDF File

Overview

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .
Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.
0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.
0 mΩ Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Volt...

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