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IRF351

Inchange Semiconductor
Part Number IRF351
Manufacturer Inchange Semiconductor
Published Aug 2, 2016
Description N-Channel MOSFET Transistor
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF351 DESCRIPTION ·VGS Rated at ±20V...
Datasheet PDF File IRF351 PDF File

IRF351
IRF351


Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF351 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 15 A Total Dissipation@TC=25℃ 150 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-A Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 0.
83 30 ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF351 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.
25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.
25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 8.
0A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0 VSD Diode Forward Voltage IF= 15A; VGS= 0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.
0MHz MIN TYP MAX UNIT 350 V 2 4V 0.
3 Ω ±100 nA 250 uA 1.
6 V 2000 3000 pF 400 600 pF 100 200 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=180V,ID=8.
0A VGS=10V,RGEN=4.
7Ω RGS=4.
7Ω Tf Fall Time MIN TYP MAX UNIT 35 ns 65 ns 150 ns 75 ns isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark ...


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