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1SS405

Part Number	1SS405
Manufacturer	Toshiba
Description	Schottky Barrier Diode
Published	Aug 1, 2016
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application 1SS405 Unit: mm z Low fo...
Datasheet	1SS405 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 High Speed Switching Application 1SS405 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.
50V (typ.
) : IR= 0.
5μA (max) : CT = 3.
9pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current IO 50 mA Surge current (10ms) IFSM 1A Power dissipation P * 150 mW Junction temperature Storage temperature range Tj 125 °C JEDEC JEITA Tstg −55 to 125 °C TOSHIBA ― ― 1-1G1A Note: Using continuously under heavy loads (e.
g.
the app...

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