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2SC2911

Part Number	2SC2911
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jul 29, 2016
Detailed Description	isc Silicon NPN Power Transistor 2SC2911 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good...
Datasheet	2SC2911 PDF File

Overview

... Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1209 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 140 mA ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 200 mA 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc ...

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