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2SC2522

Part Number	2SC2522
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jul 29, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Fast Switc...
Datasheet	2SC2522 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SA1072 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 120 W 150 ℃ Tstg Storage...

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