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21N60

Inchange Semiconductor
Part Number 21N60
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
Published Jul 24, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 21N60 ·FEATURES ·Drain Current ID= 21...
Datasheet PDF File 21N60 PDF File

21N60
21N60

Overview
...A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±30 V V ID Drain Current-Continuous 21 A IDM Drain Current-Single Plused 84 A PD Total Dissipation @TC=25℃ 140 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
42 ℃/W isc website：www.
iscsemi.
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