NPN Silicon Transistor - Suntac
Description
S
STC8050
0 NPN Silicon Transistor
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to STC8550
• Collector Current: IC=1.
5A • Collector Power Dissipation: PC=2W (TC=25°C)
1 TO-92 1.
Emitter 2.
Base 3.
Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC PC TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
Ratings 40 40 6 1.
5 1 150
65 ~ 150
Units V V V A W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter on Voltage Output Capacitance
Test Condition
IC= 100µA, IE=0 IC= 2mA, IB=0 IE= 100µA, IC=0 VCB= 35V, IE=0 VEB= 6V, IC=0 VCE= 1V, IC= 5mA VCE= 1V, IC= 100mA VCE= 1V, IC= 800mA IC= 800mA, IB= 80mA IC= 800mA, IB= 80mA VCE= 1V, IC= 10mA VCB= 10V, IE=0 f=1MHz
fT
Current Gain Bandwidth Product
VCE= 10V, IC= -50mA
Min.
40 40 6
45 85 40
100
Typ.
170 160 80 0.
28 0.
98 0.
66 15 200
Max.
100 100
Units V V V nA nA
300
0.
5 V 1.
2 V 1.
0 V
pF
MHz
hFEClassification
Classification hFE2
A 85 ~ 160
B 120 ~ 200
C 200 ~ 400
Typical Characteristics
STC8050
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-0.
5 IB=-4.
0mA
-0.
4 IB=-3.
5mA IB=-3.
0mA
-0.
3 IB=-2.
5mA IB=-2.
0mA
-0.
2 IB=-1.
5mA
IB=-1.
0mA -0.
1
IB=-0.
5mA
-0.
4 -0.
8 -1.
2 -1.
6 -2.
0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1.
Static Characteristic
-10000
IC=10IB
-1000 -100
VBE(sat) VCE(sat)
-10 -0.
1
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1000
Figure 3.
Base-Emitter Saturation Voltage Collector-Emitter Sa...
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