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HRLO180N10K

Part Number	HRLO180N10K
Manufacturer	SemiHow
Description	N-Channel Trench MOSFET
Published	Jul 18, 2016
Detailed Description	HRLO180N10K Jan 2016 HRLO180N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged...
Datasheet	HRLO180N10K PDF File

Overview

HRLO180N10K Jan 2016 HRLO180N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.
5V Value 100 9.
3 16 17 Unit V A Pȍ Pȍ Application Power Management in Inverter System Synchronous Rectification Package & Internal Circuit SOP-8 Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25୅ TA = 70୅ Operating and...

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HRLO180N10K N-Channel Trench MOSFET - SemiHow

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