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P75N06

Part Number	P75N06
Manufacturer	Pan Jit International
Description	PJP75N06
Published	Jul 17, 2016
Detailed Description	PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ...
Datasheet	P75N06 PDF File

Overview

PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.
5V,IDS@30A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-220 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.
3 • Marking : P75N06 Drain Gate Source PIN Assignment 1.
Gate 2.
Drain 3.
Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) Drain-Source Voltage PA ...

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