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K4N56163QF-GC

Samsung
Part Number K4N56163QF-GC
Manufacturer Samsung
Title 256Mbit gDDR2 SDRAM
Description FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4ban...
Features • 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Poste...
Published Jul 16, 2016
Datasheet PDF File K4N56163QF-GC PDF File


K4N56163QF-GC
K4N56163QF-GC


Features

• 1.8V + 0.1V power supply for device operation
• 1.8V + 0.1V power supply for I/O interface
• 4 Banks operation
• Posted CAS
• Programmable CAS Letency : 4,5,6 and 7
• Programmable Additive Latency : 0, 1, 2, 3. 4 and 5
• Write Latency (WL) = Read L...



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