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1N8033-GA

GeneSiC
Part Number 1N8033-GA
Manufacturer GeneSiC
Description High Temperature Silicon Carbide Power Schottky Diode
Published Jul 15, 2016
Detailed Description 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum op...
Datasheet PDF File 1N8033-GA PDF File

1N8033-GA
1N8033-GA

Overview
1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant 3 1 VRRM IF (Tc=25°C) QC = 650 V = 14 A = 20 nC PIN 1 PIN 3 SMD0.
5 / TO – 276 (Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industr...


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