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1N8024-GA

GeneSiC
Part Number 1N8024-GA
Manufacturer GeneSiC
Description High Temperature Silicon Carbide Power Schottky Diode
Published Jul 15, 2016
Detailed Description 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum op...
Datasheet PDF File 1N8024-GA PDF File

1N8024-GA
1N8024-GA

Overview
1N8024-GA High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  250°C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM = 1200 V IF (Tc=25°C) = 2.
5 A QC = 6 nC PIN 1 PIN 2 PIN 3 NC 123 TO – 257 (Isolated Base-plate Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without...


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