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BUZ211

Part Number	BUZ211
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jul 15, 2016
Detailed Description	isc N-Channel Mosfet Transistor BUZ211 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Powe...
Datasheet	BUZ211 PDF File

Overview

isc N-Channel Mosfet Transistor BUZ211 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
8Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power .
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 9 A IDM Drain Current...

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