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2SK2554

Renesas
Part Number 2SK2554
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Jul 14, 2016
Detailed Description 2SK2554 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.5 mΩ...
Datasheet PDF File 2SK2554 PDF File

2SK2554
2SK2554


Overview
2SK2554 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 4.
5 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1016-0600 (Previous: ADE-208-359D) Rev.
6.
00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1.
Gate G 2.
Drain (Flange) 3.
Source 1 2 3 S Rev.
6.
00 Sep 07, 2005 page 1 of 7 2SK2554 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics Symbol VDSS VGSS ID ID(pulse)*1 IDR*2 IAP*3 EAR*3 Pch*2 Tch Tstg Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4.
Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.
0 — — 50 — — — — — — — — — Typ — — — — — 4.
5 5.
8 80 7700 4100 760 60 420 1200 900 0.
95 105 Ratings 60 ±20 75 300 75 50 214 150 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Max — — ±10 100 2.
0 6 10 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 40 A, VGS = 10 V*4 ID = 40 A, VGS = 4 V*4 ID = 40 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 40 A, VGS = 10 V, RL = 0.
75 Ω IF =...


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