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2SK1581C

Renesas
Part Number 2SK1581C
Manufacturer Renesas
Description N-Channel MOSFET
Published Jul 14, 2016
Detailed Description Preliminary Data Sheet 2SK1581C N-CHANNEL MOSFET FOR SWITCHING R07DS1287EJ0200 Rev.2.00 Jul 24, 2015 Description The ...
Datasheet PDF File 2SK1581C PDF File

2SK1581C
2SK1581C


Overview
Preliminary Data Sheet 2SK1581C N-CHANNEL MOSFET FOR SWITCHING R07DS1287EJ0200 Rev.
2.
00 Jul 24, 2015 Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.
5 V power source.
Features  Directly driven by a 2.
5 V power source.
 Low on-state resistance RDS(on)1 = 0.
57  MAX.
(VGS = 4.
5 V, ID = 0.
3 A) RDS(on)2 = 0.
60  MAX.
(VGS = 4.
0 V, ID = 0.
3 A) RDS(on)3 = 0.
88  MAX.
(VGS = 2.
5 V, ID = 0.
15 A) Ordering Information Part Number Lead Plating Packing Package 2SK1581C-T1B-A/AT -A:Sn-Bi , -AT:Pure Sn 3000p/Reel SC-59 (3pMM) Remark "-A/AT" indicates Pb-free.
This product does not contain Pb in external electrode and other parts.
Marking XL Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature Note PW  10 s, Duty Cycle  1% VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 12 500 2 200 150 55 to 150 V V mA A mW C C R07DS1287EJ0200 Rev.
2.
00 Jul 24, 2015 Page 1 of 5 2SK1581C Electrical Characteristics (TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Body Diode Forward Voltage Note Note Pulsed  Test Circuit Switching Time Symbol Test Conditions IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VF(S-D) VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.
3 A VGS = 4.
5 V, ID = 0.
3 A VGS = 4.
0 V, ID = 0.
3 A VGS = 2.
5 V, ID = 0.
15 A VDS = 10 V, VGS = 0 V, f = 1.
0 MHz VDD = 10 V, ID = 0.
3 A, VGS = 4 V, RG = 10  IF = 0.
5 A, VGS = 0 V D.
U.
T.
RG PG.
VGS 0 τ τ = 1 μs Duty Cycl...


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