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2SJ358C

Renesas
Part Number 2SJ358C
Manufacturer Renesas
Description P-CHANNEL MOSFET FOR SWITCHING
Published Jul 14, 2016
Detailed Description Preliminary Data Sheet 2SJ358C P-CHANNEL MOSFET FOR SWITCHING R07DS1262EJ0300 Rev.3.00 Aug 17, 2015 Description The 2...
Datasheet PDF File 2SJ358C PDF File

2SJ358C
2SJ358C


Overview
Preliminary Data Sheet 2SJ358C P-CHANNEL MOSFET FOR SWITCHING R07DS1262EJ0300 Rev.
3.
00 Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.
0 V power source.
Features  Directly driven by a 4.
0 V power source.
 Low on-state resistance RDS(on)1 = 143 m  MAX.
(VGS = -10 V, ID = -2.
0 A) RDS(on)2 = 179 m MAX.
(VGS = -4.
5 V, ID = -2.
0 A) RDS(on)3 = 190 m MAX.
(VGS = -4.
0 V, ID = -2.
0 A) Ordering Information Part Number Lead Plating Packing Package 2SJ358C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-84 (MP-2) Remark "-AZ/AY" indicates Pb-free.
This product does not contain Pb in external electrode and other parts.
Marking XT1 Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) ID(DC) Drain Current (pulse) Note1 ID(pulse) Total Power Dissipation Note2 PT Channel Temperature Tch Storage Temperature Tstg Note1 PW  10 s, Duty Cycle  1% Note2 16 cm2 X 0.
7mm, ceramic substrate used -60 ∓20 ∓3.
5 ∓14 2.
0 150 55 to 150 V V A A W C C R07DS1262EJ0300 Rev.
3.
00 Aug 17, 2015 Page 1 of 6 2SJ358C Electrical Characteristics (TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage Note Note Pulsed  Test Circuit Switching Time Symbol Test Conditions IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf QG VF(S-D) VDS = -60 V, VGS = 0 V VGS = ∓20 V, VDS = 0 V VDS = -10V, ID = -1 mA VDS = -10 V, ID = -2.
0 A VGS = -10 V, ID = -2.
0 A VGS = -4.
5 V, ID = -2.
0 A VGS = -4.
0 V, ID = -2.
0 A VDS = -10 V, VGS = 0 V, f = 1.
0 MHz VDD ...


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