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2SJ210C

Renesas
Part Number 2SJ210C
Manufacturer Renesas
Description P-CHANNEL MOSFET FOR SWITCHING
Published Jul 14, 2016
Detailed Description Preliminary Data Sheet 2SJ210C P-CHANNEL MOSFET FOR SWITCHING R07DS1278EJ0200 Rev.2.00 Jul 08, 2015 Description The 2...
Datasheet PDF File 2SJ210C PDF File

2SJ210C
2SJ210C


Overview
Preliminary Data Sheet 2SJ210C P-CHANNEL MOSFET FOR SWITCHING R07DS1278EJ0200 Rev.
2.
00 Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.
5 V power source.
Features  Directly driven by a 4.
5 V power source.
 Low on-state resistance RDS(on)1 = 2.
7  MAX.
(VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.
2  MAX.
(VGS = -4.
5 V, ID = -50 mA) Ordering Information Part Number Lead Plating Packing Package 2SJ210C-T1B-A/AT -A : Sn-Bi , -AT : Pure Sn 3000p/Reel SC-59 (3pMM) Remark "-A/AT" indicates Pb-free.
This product does not contain Pb in external electrode and other parts.
Marking XG Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note Total Power Dissipation Channel Temperature Storage Temperature Note PW  10 s, Duty Cycle  1% VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -60 ∓20 ∓200 ∓800 200 150 55 to 150 V V mA mA mW C C R07DS1278EJ0200 Rev.
2.
00 Jul 08, 2015 Page 1 of 6 2SJ210C Electrical Characteristics (TA = 25C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage Note Note Pulsed  Test Circuit Switching Time Symbol Test Conditions IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG VF(S-D) VDS = -60 V, VGS = 0 V VGS = ∓20 V, VDS = 0 V VDS = VGS, ID = -250 A VDS = -10 V, ID = -100 mA VGS = -10 V, ID = -100 mA VGS = -4.
5 V, ID = -50 mA VDS = -10 V, VGS = 0 V, f = 1.
0 MHz VDD = -10 V, ID = -200 mA, VGS = -10 V, RG = 10  ID = -200 mA, VDD = -25 V, VGS = -10 V IF = 200 mA, VGS = 0 V MIN.
TYP.
MAX.
UNIT -1 A ∓10 A -1.
0 -2...


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