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2SD288

TGS
Part Number 2SD288
Manufacturer TGS
Description Silicon NPN Power Ttransistors
Published Jul 14, 2016
Detailed Description TIGER ELECTRONIC CO.,LTD Silicon NPN Power Ttransistors Product specification 2SD288 APPLICATIONS .Low frequency powe...
Datasheet PDF File 2SD288 PDF File

2SD288
2SD288


Overview
TIGER ELECTRONIC CO.
,LTD Silicon NPN Power Ttransistors Product specification 2SD288 APPLICATIONS .
Low frequency power amplifier .
Power regulator applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max.
Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 55 V 6.
0 V 3.
0 A 0.
3 A 25 W 150 oC -55~150 oC TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICEO VCB=55V, IE=0 Emitter Cut-off Current IEBO VEB=6.
0V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO IC=10mA, IB=0 hFE VCE=5V, IC=0.
5A Collector-Emitter Saturation Voltage VCE(sat) IC=1.
0A, IB=100mA Base-Emitter Saturation Voltage VBE(sat) IC=1.
0A, IB=100mA Min.
Typ.
Max.
Unit — — 10 uA — — 10 uA 55 — — V 40 — 240 — — 1.
0 V — — 1.
5 V ‹ hFE classifications RO Y 40-80 70-140 120-240 ...


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