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IXKP13N60C5M

IXYS
Part Number IXKP13N60C5M
Manufacturer IXYS
Description CoolMOS Power MOSFET
Published Jul 14, 2016
Detailed Description IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET U...
Datasheet PDF File IXKP13N60C5M PDF File

IXKP13N60C5M
IXKP13N60C5M


Overview
IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 6.
5 A VDSS = 600 V R =DS(on) max 0.
3 Ω TO-220 FP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 4.
4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 6.
5 A 4.
5 A 290 mJ 0.
44 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 6.
6 A VDS = VGS; ID = 0.
44 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 6.
6 A VGS = 10 V; VDS = 400 V ID = 6.
6 A; RG = 4.
3 Ω 270 2.
5 3 10 1100 60 22 5 7.
6 10 5 40 5 300 mΩ 3.
5 V 1 µA µA 100 nA pF pF 30 nC nC nC ns ns ns ns 3.
85 K/W Features • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter 1) CoolMOS™ is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved 20090209d 1-4 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
IS VGS = 0 V VSD IF = 6.
6 A; VGS = 0 V trr QRM IF = 6.
6 A; -diF/dt = 100 A/µs; VR = 400 V IRM 6.
6 A 0.
9 1.
2 V 300 ns 3.
9 µC 26 A Component Symbol Conditions TVJ operating Tstg Md mounting torque Symbol Conditions RthCH RthJA Weight with heatsink compound thermal resistane junti...


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