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IXKP10N60C5M

IXYS
Part Number IXKP10N60C5M
Manufacturer IXYS
Description CoolMOS Power MOSFET
Published Jul 14, 2016
Detailed Description Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Lo...
Datasheet PDF File IXKP10N60C5M PDF File

IXKP10N60C5M
IXKP10N60C5M


Overview
Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 5.
4 A VDSS = 600 V RDS(on) max = 0.
385 Ω D G S TO-220 ABFP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 3.
4 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0.
.
.
480 V Maximum Ratings 600 V ± 20 V 5.
4 A 3.
7 A 225 mJ 0.
3 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V; ID = 5.
2 A VDS = VGS; ID = 0.
34 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 5.
2 A VGS = 10 V; VDS = 400 V ID = 5.
2 A; RG = 4.
3 Ω 350 2.
5 3 tbd 790 38 17 4 6 tbd tbd tbd tbd 385 mΩ 3.
5 V 1 µA µA 100 nA pF pF 22 nC nC nC ns ns ns ns 3.
95 K/W Features • Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) • Fully isolated package Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter CoolMOS is a trademark of Infineon Technologies AG.
0649 IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved 1-4 Advanced Technical Information Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
IS VGS = 0 V VSD IF = 5.
2 A; VGS = 0 V trr QRM IF = 5.
2 A; -diF/dt = 100 A/µs; VR = 400 V IRM 5.
2 A 0.
9 1.
2 V 260 ns 21 µC 24 A Component Symbol Conditions TVJ operating Tstg Md mounting torque Symbol Conditions RthCH RthJA Weight with heatsink compound thermal resistance junction - ambient Maximu...


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