DatasheetsPDF.com

10N60

nELL
Part Number 10N60
Manufacturer nELL
Description N-Channel Power MOSFET
Published Jul 14, 2016
Detailed Description SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Ne...
Datasheet PDF File 10N60 PDF File

10N60
10N60


Overview
SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES RDS(ON) = 0.
8Ω@VGS = 10V Ultra low gate charge(57nC max.
) Low reverse transfer capacitance (CRSS = 18pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (10N60A) GDS TO-220F (10N60AF) D G S TO-263(D2PAK) (10N60H) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
10 600 0.
8 @ VGS = 10V 57 D (Drain) G (Gate) S (Source) www.
nellsemi.
com Page 1 of 9 SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS ID IDM IAR EAR EAS dv/dt Gate to Source voltage Continuous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3) TC=25°C TC=100°C IAR=10A, RGS=50Ω, VGS=10V IAS=10A, L = 14.
2mH PD Total power dissipation TO-220AB/ TO-263 TC=25°C TO-220F TJ TSTG Operation junction temperature Storage temperature TL Maximum soldering temperature, for 10 seconds 1.
6mm from case Mounting torque, #6-32 or M3 screw VALUE UNIT 600 600 V ±30 10 6.
2 A 40 10 15.
6 700 mJ 4.
5 V /ns 156 W 50 -55 to 150 -55 to 150 ºC 300 10 (1.
1) lbf.
in (N.
m) Note: 1.
Repetitive rating: pulse width limited by junction temperature.
2.
IAS = 10A, VDD = 50V, L = 14.
2mH, R...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)