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RB717F

JCET
Part Number RB717F
Manufacturer JCET
Description Schottky barrier Diode
Published Jul 12, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes RB717F SCHOTTKY BARRIER DIODE FEA...
Datasheet PDF File RB717F PDF File

RB717F
RB717F

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-323 Plastic-Encapsulate Diodes RB717F SCHOTTKY BARRIER DIODE FEATURES: Low VF, Low VR High reliability MARKING: 3E· SOT-323 1 3 2 Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings @Ta=25 ℃ Parameter Peak reverse voltage DC reverse voltage Non-repetitive Peak Forward Surge Current@t=8.
3ms Average forward current Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VR IFSM IO PD RθJA Tj Tstg Limit 40 40 200 30 200 500 125 -55~+150 Unit V V mA mA mW ℃/W ℃ ℃ ELECTRICAL CHA RACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Reverse vo...


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