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RB706F-40

SEMTECH
Part Number RB706F-40
Manufacturer SEMTECH
Description SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Published Jul 12, 2016
Detailed Description RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification Features • High reliability • Low reve...
Datasheet PDF File RB706F-40 PDF File

RB706F-40
RB706F-40

Overview
RB706F-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification Features • High reliability • Low reverse current 3 12 Marking Code: ZA Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.
3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 µA Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol Min.
Typ.
Max.
Unit VF - - 0.
37 V...


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