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RB706F-40

Part Number	RB706F-40
Manufacturer	JCET
Description	Schottky barrier Diode
Published	Jul 12, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB706F-40 Schottky Barrier...
Datasheet	RB706F-40 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB706F-40 Schottky Barrier Diode FEATURES z Small package z Low VF and low IR z High reliability MAKING: 3J· 1 3 2 Maximum Ratings @Ta=25℃ Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Non-repetitive Peak Forward Surge Current@t=8.
3ms Power dissipation TJuhnercmtioanl RtoesAismtabniecnetfrom Junction temperature Storage temperature Solid dot = Green molding compound device,if none, the normal device.
Symbol VRM VR IO IFSM PD RθJA Tj Tstg Limit 45 40 30 200 200 500 125 -55+150 Unit V V mA mA mW ℃/W ℃ ℃ Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit ...

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