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RB521G-30

SEMTECH
Part Number RB521G-30
Manufacturer SEMTECH
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Published Jul 12, 2016
Detailed Description RB521G-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power application PINNING PIN 1 2 1 ...
Datasheet PDF File RB521G-30 PDF File

RB521G-30
RB521G-30

Overview
RB521G-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power application PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 E Top View Marking Code: "E" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (60 Hz for 1 cyc.
) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 10 V Symbol VR IO IFSM Tj Ts Value 30 100 1 125 - 40 to + 125 Unit V mA A OC OC Symbol VF IR Max.
0.
35 10 Unit V µA Note: Please pay attention to static electricity when handling.
SEMTECH EL...


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