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NP16N06QLK

Renesas
Part Number NP16N06QLK
Manufacturer Renesas
Description Dual N-Channel Power MOSFET
Published Jul 11, 2016
Detailed Description NP16N06QLK 60 V – 16 A – Dual N-channel Power MOS FET Application: Automotive Data Sheet R07DS1290EJ0200 Rev. 2.00 May ...
Datasheet PDF File NP16N06QLK PDF File

NP16N06QLK
NP16N06QLK

Overview
NP16N06QLK 60 V – 16 A – Dual N-channel Power MOS FET Application: Automotive Data Sheet R07DS1290EJ0200 Rev.
2.
00 May 24, 2018 Description NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance  RDS(on)1 = 39 m MAX.
(VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX.
(VGS = 4.
5 V, ID = 4 A)  Low Ciss: Ciss = 500 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified  Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.
Steps must be tak...


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