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B5817W

JCET
Part Number B5817W
Manufacturer JCET
Description SCHOTTKY BARRIER DIODE
Published Jul 10, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DI...
Datasheet PDF File B5817W PDF File

B5817W
B5817W

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications.
SOD-123 MARKING: B5817W:SJ B5818W:SK B5819W:SL The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol B5817W B5818W Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-repetitive Peak Forward Surge Current @t=8.
3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage Temperature VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM PD RθJA TJ TSTG 20 20 14 30 30 21 1 9 1.
5 500 200 125 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) B5819W 40 40 28 Unit V V V A A A mW ℃/W ℃ ℃ Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 1mA B5817W B5818W B5819W VR=20V VR=30V VR=40V B5817W B5818W B5819W B5817W IF=1A IF=3A B5818W IF=1A IF=3A B5819W IF=1A IF=3A VR=4V, f=1MHz Min 20 30 40 Max Unit V 1 0.
45 0.
75 0.
55 0.
875 0.
6 0.
9 120 mA V V V pF www.
cj-elec.
com 1 D,Mar,2015 Typical Characteristics Forward Characteristics 5 1 oC =100 oC T a =25 T a FORWARD CURRENT IF (A) 0.
1 0.
01 0.
0 0.
2 0.
4 0.
6 FORWARD VOLTAGE VF (V) 0.
8 REVERSE CURRENT IR (mA) B5817W Reverse Characteristics 10 1 Ta=100 oC 0.
1 Ta=25 oC 0.
01 1E-3 0 5 10 15 20 REVERSE VOLTAGE VR (V) 25 CAPACITANCE BETWEEN TERMINALS CT (pF) POWER DISSIPATION PD (mW) Capacitance Characteristics 1000 Ta=25℃ f=1MHz 100 10 0.
1 1 10 100 REVERSE VOLTAGE VR (V) Power Derating Curve 600 500 400 300 200 100 0 0 25 50 75 100 125 15...


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