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MRF555

Microsemi
Part Number MRF555
Manufacturer Microsemi
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published Jul 1, 2016
Detailed Description 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW ...
Datasheet PDF File MRF555 PDF File

MRF555
MRF555

Overview
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Specified @ 12.
5 V, 470 MHz Characteristics • Output Power = 1.
5 W • Minimum Gain = 11 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
MRF555 Power Macro ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC MSC1316.
PDF 10-25-99 Value 16 30 3.
0 500 Unit Vdc Vdc Vdc mA 3.
0 Watts 40 mW/ ºC MRF555 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCEO BVCES BVEBO ICES HFE Collector-Emitter Breakdown Voltage (IC = 5 mAdc, IB = 0) Collector-Emitter Sustaining V...


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