N-Channel MOSFET Transistor - Inchange Semiconductor
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
18
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.
0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
35
℃/W
2SK1018
isc website：www.
iscsemi.
cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 8A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Forward On-Voltage
IS=18A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=18A; RL=25Ω
toff
Turn-off time
2SK1018
MIN TYP.
MAX UNIT
500
V
2.
5
3.
5
5.
0
V
0.
3 0.
45
Ω
±100 nA
500 uA
1.
18 1.
70
V
100 150
ns
170 260
ns
80
120
ns
330 400
ns
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
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