DatasheetsPDF.com

2SD1516

Part Number	2SD1516
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching S...
Datasheet	2SD1516 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·High IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 1.
4 W 25 150 ℃ Tstg Storage Temperature -55~150 ...

Similar Datasheet

2SD1500 Power Transistor - Inchange Semiconductor
2SD1503 NPN Transistor - INCHANGE
2SD1504 Silicon NPN Transistor - Hitachi Semiconductor
2SD1505 SILICON POWER TRANSISTOR - SavantIC
2SD1505 NPN Transistor - INCHANGE
2SD1506 NPN Transistor - INCHANGE
2SD1506 SILICON POWER TRANSISTOR - SavantIC
2SD1507M NPN Silicon Transistor - Rohm
2SD1508 Silicon NPN Transistor - Toshiba Semiconductor
2SD1509 Silicon NPN Transistor - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)