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2SD1314

Part Number	2SD1314
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION ·High DC Current Gain :hFE= 10...
Datasheet	2SD1314 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION ·High DC Current Gain :hFE= 100(Min) @ IC= 15A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 2.
0V (Max) @ IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Current-peak IB Base Current PC Collector Power Diss...

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